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專利授權區


專利授權區
專利名稱(中) Semiconductor structure
專利名稱(英) Semiconductor structure
專利家族 中華民國:I862984
大陸:CN116666452A(公開號)
美國:12,550,345
專利權人 國立清華大學 100.00%
發明人 黃智方,胡家瑋,許甫任
技術領域 電子電機
專利摘要(英)
A semiconductor structure includes a Schottky diode structure, which includes: a first trench extending through a first N-type semiconductor layer and being disposed in the first N-type semiconductor layer; a first insulating layer disposed in the first trench; two polysilicon layers or metal silicide layers disposed in the first trench, wherein an upper one and a lower one of the polysilicon layers or metal silicide layers are disposed in parallel; a first P-type protective layer, which is grounded and disposed on a bottom of the first trench, and contacts the first insulating layer and a bottom surface of the lower one of the polysilicon layers or metal silicide layers; a metal layer respectively disposed as a top surface and a lower bottom surface of the semiconductor structure to form a source and a drain as electrodes for the semiconductor structure to be connected to an external device.
聯絡資訊
承辦人姓名 李曉琪
承辦人電話 03-5715131 #31061
承辦人Email hsiaochi@mx.nthu.edu.tw
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