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專利授權區

專利授權區
專利名稱(中)	加速度計
專利家族	中華民國：I391663 美國：8,443,670
專利權人	國立清華大學 100%
發明人	吳名清,方維倫,徐家保
技術領域	機械結構,電子電機

專利摘要(中)
Disclosed is a novel three-axis capacitive-type accelerometer implemented on SOI wafer. The accelerometer consists of four springs, one proof mass, four pairs of gap-closing sensing electrodes (each pair of gap-closing sensing electrode containing one movable electrode and one stationary electrode), and several metal-vias as the electrical interconnections. The movable electrodes are on the proof mass, whereas the stationary electrodes are fixed to the substrate. The three-axis accelerometer has five merits. (1) The sensitivity of the accelerometer is improved since the proof-mass is increased by containing both device and handling silicon layers; (2) The sensitivity is also improved by the gap-closing differential capacitive sensing electrodes design; (3) The parasitic capacitance at bond pad is reduced by the existing of metal-vias between the device Si layer and handling Si layer; (4) The sensing gap thickness is precisely defined by the buried oxide of SOI wafer; (5) The stationary sensing electrodes anchored to the substrate also act as the limit stops to protect the accelerometer.

專利摘要(中)

Disclosed is a novel three-axis capacitive-type accelerometer implemented on SOI wafer. The accelerometer consists of four springs, one proof mass, four pairs of gap-closing sensing electrodes (each pair of gap-closing sensing electrode containing one movable electrode and one stationary electrode), and several metal-vias as the electrical interconnections. The movable electrodes are on the proof mass, whereas the stationary electrodes are fixed to the substrate. The three-axis accelerometer has five merits. (1) The sensitivity of the accelerometer is improved since the proof-mass is increased by containing both device and handling silicon layers; (2) The sensitivity is also improved by the gap-closing differential capacitive sensing electrodes design; (3) The parasitic capacitance at bond pad is reduced by the existing of metal-vias between the device Si layer and handling Si layer; (4) The sensing gap thickness is precisely defined by the buried oxide of SOI wafer; (5) The stationary sensing electrodes anchored to the substrate also act as the limit stops to protect the accelerometer.

聯絡資訊
承辦人姓名	劉千綺
承辦人電話	03-571-5131 #31181
承辦人Email	chienchi@mx.nthu.edu.tw