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專利授權區
專利名稱(英)	FERROELECTRIC MATERIAL AND FERROELECTRIC MEMORY DEVICE MADE THEREFROM
專利家族	中華民國：I244205 美國：7,307,304
專利權人	國立清華大學 100.00%
發明人	洪正隆,吳泰伯
技術領域	材料化工,電子電機

專利摘要(中)
A ferroelectric material includes a compound of formula (I): (Pb.sub.1-x-zBa.sub.zA.sub.x)(B.sub.yZr.sub.1-y)O.sub.3, (I) wherein 0.ltoreq.x.ltoreq.0.1, 0.ltoreq.y.ltoreq.0.020, 0.15.ltoreq.z.ltoreq.0.35, with the proviso that y.noteq.0 when x=0, and that x.noteq.0, when y=0; and wherein A is a first element having a valence number greater than that of Pb, and B is a second element having a valence number greater than that of Zr. A ferroelectric memory device made from the ferroelectric material is also disclosed.

專利摘要(中)

A ferroelectric material includes a compound of formula (I): (Pb.sub.1-x-zBa.sub.zA.sub.x)(B.sub.yZr.sub.1-y)O.sub.3, (I) wherein 0.ltoreq.x.ltoreq.0.1, 0.ltoreq.y.ltoreq.0.020, 0.15.ltoreq.z.ltoreq.0.35, with the proviso that y.noteq.0 when x=0, and that x.noteq.0, when y=0; and wherein A is a first element having a valence number greater than that of Pb, and B is a second element having a valence number greater than that of Zr. A ferroelectric memory device made from the ferroelectric material is also disclosed.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw