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專利授權區

專利授權區
專利名稱(中)	自旋軌道力矩磁阻式隨機存取記憶體
專利名稱(英)	SPIN ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY
專利家族	中華民國：(公開號)
專利權人	國立清華大學 100%
發明人	賴志煌,潘宗侑,曾致翔,鄒易呈,陳榮志
技術領域	材料化工,電子電機

專利摘要(英)
A spin orbit torque magnetoresistive random access memory (SOT MRAM) includes at least a spin current source alloy layer, a ferromagnetic free layer, and an insulation layer. The spin current source alloy layer is a nickel-tungsten alloy layer, the ferromagnetic free layer is disposed on the spin current source alloy layer, and the insulation layer is disposed on the ferromagnetic free layer. Since the nickel-tungsten alloy layer has good perpendicular magnetic anisotropic and can maintain a high spin Hall angle, it is suitable as a spin current source for the SOT MRAM.

專利摘要(英)

A spin orbit torque magnetoresistive random access memory (SOT MRAM) includes at least a spin current source alloy layer, a ferromagnetic free layer, and an insulation layer. The spin current source alloy layer is a nickel-tungsten alloy layer, the ferromagnetic free layer is disposed on the spin current source alloy layer, and the insulation layer is disposed on the ferromagnetic free layer. Since the nickel-tungsten alloy layer has good perpendicular magnetic anisotropic and can maintain a high spin Hall angle, it is suitable as a spin current source for the SOT MRAM.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw