專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

搜尋專利授權區

關鍵字

» 新增關鍵字

選單

專利授權區

專利授權區
專利名稱(英)	SEMICONDUCTOR POWER DEVICE
專利家族	中華民國：I871138 美國：2025-0203908(公開號)
專利權人	國立清華大學 100.00%
發明人	徐碩鴻,黃敬源,葉昭輝
技術領域	通信傳輸,能源科技,電子電機

專利摘要(英)
Provided is a semiconductor power device including a substrate having a circuit region and a power device region, a buffer layer, a nitride channel layer, a barrier layer, a power transistor and a complementary logic circuit. The buffer layer is disposed on the substrate. The nitride channel layer is disposed on the buffer layer. The barrier layer is disposed on the nitride channel layer. The power transistor is disposed on the substrate in the power device region. The complementary logic circuit is disposed on the substrate in the circuit region and electrically connected to the power transistor, and includes a P-type transistor and an N-type transistor. The P-type transistor includes a 2D material channel layer. The N-type transistor is electrically connected to the P-type transistor. A 2DEG is located in the nitride channel layer and adjacent to an interface between the nitride channel layer and the barrier layer.

專利摘要(英)

Provided is a semiconductor power device including a substrate having a circuit region and a power device region, a buffer layer, a nitride channel layer, a barrier layer, a power transistor and a complementary logic circuit. The buffer layer is disposed on the substrate. The nitride channel layer is disposed on the buffer layer. The barrier layer is disposed on the nitride channel layer. The power transistor is disposed on the substrate in the power device region. The complementary logic circuit is disposed on the substrate in the circuit region and electrically connected to the power transistor, and includes a P-type transistor and an N-type transistor. The P-type transistor includes a 2D material channel layer. The N-type transistor is electrically connected to the P-type transistor. A 2DEG is located in the nitride channel layer and adjacent to an interface between the nitride channel layer and the barrier layer.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw