A semiconductor device comprising a substrate; a bottom sublayer of single atomic layer thickness disposed on the substrate, at the bottom of the device, and arranged in a horizontal direction; a metal sublayer of single atomic layer thickness overlying the bottom sublayer in a horizontal direction and electrically connected to the bottom sublayer; a top sublayer of single atomic layer thickness disposed in a horizontal direction and electrically connected to a portion of the metal sublayer, wherein the top surface of the contact metal layer is higher than the top surface of the top sublayer, wherein the contact metal atoms of the bottom layer of the contact metal layer form a corresponding bonding with the surface of the exposed metal sublayer by removing the top sublayer, and wherein the original corresponding bonding is maintained between the metal sublayer and the bottom sublayer. |