專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

專利授權區
專利名稱(英)	FLASH MEMORY CELL
專利家族	美國：8,093,649
專利權人	國立清華大學 100%
發明人	林崇榮,金雅琴
技術領域	電子電機

專利摘要(中)
A flash memory cell includes a substrate, a source, a drain, a first oxide, a second oxide, a floating gate and a control gate. The source and a drain are formed in the substrate separately, and are doped with N-type ions. The first oxide is formed on the substrate. The floating gate is formed on the first oxide, wherein the floating gate is doped with P-type ions. The second oxide formed on the floating gate. The control gate formed on the second oxide.

專利摘要(中)

A flash memory cell includes a substrate, a source, a drain, a first oxide, a second oxide, a floating gate and a control gate. The source and a drain are formed in the substrate separately, and are doped with N-type ions. The first oxide is formed on the substrate. The floating gate is formed on the first oxide, wherein the floating gate is doped with P-type ions. The second oxide formed on the floating gate. The control gate formed on the second oxide.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw

電　話：

+886-3-5162301

傳　真：

+886-3-5162275

信　箱：

ocic@my.nthu.edu.tw

地　址：

300044 新竹市光復路二段101號國立清華大學創新育成大樓 111室