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專利授權區
專利名稱(中) 二硫化鉬奈米片感測器及其製造方法
專利名稱(英) MOLYBDENUM DISULFIDE SENSOR AND METHOD FOR FABRICATING THE SAME
專利家族 中華民國:I606009
美國:10,161,922
專利權人 國立清華大學 100%
發明人 王世邦,吳忠軒,洪健中
技術領域 機械結構,生化醫藥,電子電機
專利摘要(中)
A molybdenum disulfide sensor includes a flexible substrate, a patterned circuit layer and at least a molybdenum disulfide sheet. The flexible substrate has a gas flow channel. The patterned circuit layer is formed on the flexible substrate, and the patterned circuit layer includes a first electrode and a second electrode. The second electrode is faced toward the first electrode, and a gap is formed between the first electrode and the second electrode. The molybdenum disulfide sheet is located in the gap and is connected with the first electrode and the second electrode.
聯絡資訊
承辦人姓名 李佳玲
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