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專利授權區
專利名稱(中)	具幾何結構之二維半導體及形成方法
專利名稱(英)	TWO-DIMENSIONAL SEMICONDUCTOR WITH GEOMETRY STRUCTURE AND GENERATING METHOD THEREOF
專利家族	中華民國：I683786 大陸：CN111009452B 美國：11,139,371
專利權人	國立清華大學 100.00%
發明人	李奕賢,陳奕彤,韓羽唯,張鋅權,楊東翰
技術領域	光電光學

專利摘要(中)
A two-dimensional (2D) semiconductor with geometry structure and generating method thereof is disclosed herein and the method includes following steps: forming a nano-layer; disposing a 2D material on a substrate; forming a medium layer on the 2D material; transferring the medium layer and the 2D material to the nano-layer; removing the medium layer and leaving the 2D material on a surface of the nano-layer.. In accordance with the generating method for 2D semiconductor with geometry structure, a nano microstructure is implemented to enhance and control the 2D materials for field emission and photon emission efficiency.

專利摘要(中)

A two-dimensional (2D) semiconductor with geometry structure and generating method thereof is disclosed herein and the method includes following steps: forming a nano-layer; disposing a 2D material on a substrate; forming a medium layer on the 2D material; transferring the medium layer and the 2D material to the nano-layer; removing the medium layer and leaving the 2D material on a surface of the nano-layer.. In accordance with the generating method for 2D semiconductor with geometry structure, a nano microstructure is implemented to enhance and control the 2D materials for field emission and photon emission efficiency.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw