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專利授權區

專利授權區
專利名稱(英)	LOW VOLTAGE ONE-TIME-PROGRAMMABLE MEMORY AND ARRAY THEREOF
專利家族	中華民國：I795275 美國：12,040,028
專利權人	國立清華大學 100% ,國立清華大學 100%
發明人	金雅琴,林崇榮,黃耀弘
技術領域	通信傳輸,光電光學,電子電機

專利摘要(英)
A low voltage one-time-programmable memory includes a first conductive layer, a first via, a second conductive layer, a select transistor, a second via and a third conductive layer. The first via is electrically connected to the first conductive layer. The second conductive layer is electrically connected to the first via. The select transistor is electrically connected to the second conductive layer. The second via is electrically connected to the second conductive layer. The third conductive layer is electrically connected to the second via. A first current passed through the second via is a sum of a second current passed through the first via and a third current passed through the select transistor.

專利摘要(英)

A low voltage one-time-programmable memory includes a first conductive layer, a first via, a second conductive layer, a select transistor, a second via and a third conductive layer. The first via is electrically connected to the first conductive layer. The second conductive layer is electrically connected to the first via. The select transistor is electrically connected to the second conductive layer. The second via is electrically connected to the second conductive layer. The third conductive layer is electrically connected to the second via. A first current passed through the second via is a sum of a second current passed through the first via and a third current passed through the select transistor.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw