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專利授權區

專利授權區
專利名稱(中)	半導體裝置的製法及其製品
專利名稱(英)	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY
專利家族	美國：US2025/0351400A1(公開號)
專利權人	國立清華大學 100.00%
發明人	闕郁倫,劉欣睿,蘇麻呀
技術領域	材料化工,電子電機

專利摘要(英)
A method for manufacturing a semiconductor device includes: forming a two-dimensional material layer made of transition metal dichalcogenides on a semiconductor substrate unit; forming two lower metallic layers made of first metallic material and spaced apart on the two-dimensional material layer; forming two upper metallic layers made of second metallic material respectively on the two lower metallic layers so as to form two double-layer metal structures; and subjecting the two double-layer metal structures to a selective annealing process and cooling to room temperature. The semiconductor device made by the method is also provided.

專利摘要(英)

A method for manufacturing a semiconductor device includes: forming a two-dimensional material layer made of transition metal dichalcogenides on a semiconductor substrate unit; forming two lower metallic layers made of first metallic material and spaced apart on the two-dimensional material layer; forming two upper metallic layers made of second metallic material respectively on the two lower metallic layers so as to form two double-layer metal structures; and subjecting the two double-layer metal structures to a selective annealing process and cooling to room temperature. The semiconductor device made by the method is also provided.

聯絡資訊
承辦人姓名	黃允恬
承辦人電話	(03)571-5131#62305
承辦人Email	yuntian@mx.nthu.edu.tw