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專利授權區
專利名稱(中)	半導體量子點及其製法
專利名稱(英)	SEMICONDUCTOR QUANTUM DOT STRUCTURE AND METHOD FOR MAKING THE SAME
專利家族	中華民國：I843173 美國：US2024/0052241A1(公開號)
專利權人	國立清華大學 100%
發明人	陳學仕
技術領域	材料化工,光電光學

專利摘要(英)
[0009] Therefore, an object of the present disclosure is to provide a semiconductor quantum dot structure that can alleviate at least one of the drawbacks of the prior art. [0010] According to an aspect of the present disclosure, the semiconductor quantum dot structure includes a core and a shell. The core includes a seed crystal, a core layer, and a barrier layer. The seed crystal is made of a first compound M1C1, and has a crystal surface having a plurality of first regions and a plurality of second regions. Each of the first regions is inactive with oxygen, and each of the second regions is easily reactive with oxygen. The core layer is grown on the seed crystal, is made of the first compound M1C1, and has a plurality of first areas and a plurality of second areas. Each of the first areas is positioned on a corresponding one of the first regions of the crystal surface. Each of the second areas is positioned on a corresponding one of the second regions of the crystal surface. Each of the first areas has a thickness that is greater than that of each of the second areas. The barrier layer is grown on the core layer, and is made of a second compound selected from the group consisting of M1X1 and X2C1. The shell is grown on the barrier layer to enclose the core, and is made of a third compound M2C2. M1 is a group III element selected from the group consisting of Al, Ga, In, and combinations thereof, and C1 is a group V element selected from the group consisting of P, As, and a combination thereof. X1 is an element selected from the group consisting of N, As, S, Se, Te, F, Cl, Br, and I, and X2 is an element selected from the group consisting of Na, K, Cs, Mg, Cu, Zn, Cd, Hg, Al, Ga, and Pb. M2 is a group II element selected from the group consisting of Zn, Cd, and a combination thereof, and C2 is a group VI element selected from the group consisting of S, Se, O, Te, and combinations thereof. [0011] According to another aspect of the present disclosure, a method for making semiconductor quantum dot structures includes the steps of: (a) mixing a solution containing a precursor of M1 with a solution containing a precursor of C1 to form a first mixture solution; (b) heating the first mixture solution to a first temperature not lower than a nucleation temperature of a first compound M1C1 for a first predetermined time period so as to form a plurality of seed crystals of the first compound M1C1 in the first mixture solution, each of the seed crystals having a crystal surface that has a plurality of first regions and a plurality of second regions, each of the first regions being inactive with oxygen, each of the second regions being oxidized by oxygen present in the first mixture solution so as to form an oxide layer thereon; (c) forming a second mixture solution by continuously adding an additional solution containing the precursor of M1, an addition solution containing the precursor of C1, and a first diluted fluoride-containing etchant into the first mixture solution obtained after step (b) for a second predetermined time period, while keeping at the first temperature, so as to permit the oxide layer formed on each of the second regions of the seed crystals to be etched by the first diluted fluoride-containing etchant, and so as to grow a plurality of core layers respectively on the seed crystals, each of the core layers having a plurality of first areas and a plurality of second areas, the first areas of each of the core layers being respectively grown on the first regions of a corresponding one of the seed crystals, the second areas of each of the core layers being respectively grown on the second regions of a corresponding one of the seed crystals, each of the first areas having a thickness greater than that of each of the second areas, the first diluted fluoride-containing etchant having a concentration ranging from 1 vol％ to 5 vol％ and a volume ranging from 0.1 mL to 2 mL; (d) forming a third mixture solution by continuously adding a solution containing a precursor of X1 or a solution containing a precursor of X2 into the second mixture solution obtained after step (c) for a third predetermined time period so as to allow growth of a plurality of barrier layers respectively on the core layers, thereby obtaining, in the third mixture solution, a plurality of cores each including one of the seed crystals, a corresponding one of the core layers and a corresponding one of the barrier layers, each of the barrier layers being made of a second compound selected from the group consisting of M1X1 and X2C1; (e) removing the cores from the third mixture solution and dispersing the cores in a clear solution including a precursor of M2 so as to obtain a clear solution including the cores and the precursor of M2; and (f) heating the clear solution including the cores and the precursor of M2 to a second temperature not lower than a nucleation temperature of a third compound M2C2, and then adding a solution containing a precursor of C2, so as to grow a plurality of shells respectively on the barrier layers of the cores, thereby obtaining the semiconductor quantum dot structures each including one of the cores and a corresponding one of the shells. [0012] In the method for making the semiconductor quantum dot structures of the present disclosure, M1 is a group III element selected from the group consisting of Al, Ga, In, and combinations thereof, and C1 is a group V element selected from the group consisting of P, As, and a combination thereof. X1 is an element selected from the group consisting of N, As, S, Se, Te, F, Cl, Br, and I, and X2 is an element selected from the group consisting of Na, K, Cs, Mg, Cu, Zn, Cd, Hg, Al, Ga, and Pb. M2 is a group II element selected from the group consisting of Zn, Cd, and a combination thereof, and C2 is a group VI element selected from the group consisting of S, Se, O, Te, and combinations thereof.

專利摘要(英)

[0009] Therefore, an object of the present disclosure is to provide a semiconductor quantum dot structure that can alleviate at least one of the drawbacks of the prior art. [0010] According to an aspect of the present disclosure, the semiconductor quantum dot structure includes a core and a shell. The core includes a seed crystal, a core layer, and a barrier layer. The seed crystal is made of a first compound M1C1, and has a crystal surface having a plurality of first regions and a plurality of second regions. Each of the first regions is inactive with oxygen, and each of the second regions is easily reactive with oxygen. The core layer is grown on the seed crystal, is made of the first compound M1C1, and has a plurality of first areas and a plurality of second areas. Each of the first areas is positioned on a corresponding one of the first regions of the crystal surface. Each of the second areas is positioned on a corresponding one of the second regions of the crystal surface. Each of the first areas has a thickness that is greater than that of each of the second areas. The barrier layer is grown on the core layer, and is made of a second compound selected from the group consisting of M1X1 and X2C1. The shell is grown on the barrier layer to enclose the core, and is made of a third compound M2C2. M1 is a group III element selected from the group consisting of Al, Ga, In, and combinations thereof, and C1 is a group V element selected from the group consisting of P, As, and a combination thereof. X1 is an element selected from the group consisting of N, As, S, Se, Te, F, Cl, Br, and I, and X2 is an element selected from the group consisting of Na, K, Cs, Mg, Cu, Zn, Cd, Hg, Al, Ga, and Pb. M2 is a group II element selected from the group consisting of Zn, Cd, and a combination thereof, and C2 is a group VI element selected from the group consisting of S, Se, O, Te, and combinations thereof. [0011] According to another aspect of the present disclosure, a method for making semiconductor quantum dot structures includes the steps of: (a) mixing a solution containing a precursor of M1 with a solution containing a precursor of C1 to form a first mixture solution; (b) heating the first mixture solution to a first temperature not lower than a nucleation temperature of a first compound M1C1 for a first predetermined time period so as to form a plurality of seed crystals of the first compound M1C1 in the first mixture solution, each of the seed crystals having a crystal surface that has a plurality of first regions and a plurality of second regions, each of the first regions being inactive with oxygen, each of the second regions being oxidized by oxygen present in the first mixture solution so as to form an oxide layer thereon; (c) forming a second mixture solution by continuously adding an additional solution containing the precursor of M1, an addition solution containing the precursor of C1, and a first diluted fluoride-containing etchant into the first mixture solution obtained after step (b) for a second predetermined time period, while keeping at the first temperature, so as to permit the oxide layer formed on each of the second regions of the seed crystals to be etched by the first diluted fluoride-containing etchant, and so as to grow a plurality of core layers respectively on the seed crystals, each of the core layers having a plurality of first areas and a plurality of second areas, the first areas of each of the core layers being respectively grown on the first regions of a corresponding one of the seed crystals, the second areas of each of the core layers being respectively grown on the second regions of a corresponding one of the seed crystals, each of the first areas having a thickness greater than that of each of the second areas, the first diluted fluoride-containing etchant having a concentration ranging from 1 vol％ to 5 vol％ and a volume ranging from 0.1 mL to 2 mL; (d) forming a third mixture solution by continuously adding a solution containing a precursor of X1 or a solution containing a precursor of X2 into the second mixture solution obtained after step (c) for a third predetermined time period so as to allow growth of a plurality of barrier layers respectively on the core layers, thereby obtaining, in the third mixture solution, a plurality of cores each including one of the seed crystals, a corresponding one of the core layers and a corresponding one of the barrier layers, each of the barrier layers being made of a second compound selected from the group consisting of M1X1 and X2C1; (e) removing the cores from the third mixture solution and dispersing the cores in a clear solution including a precursor of M2 so as to obtain a clear solution including the cores and the precursor of M2; and (f) heating the clear solution including the cores and the precursor of M2 to a second temperature not lower than a nucleation temperature of a third compound M2C2, and then adding a solution containing a precursor of C2, so as to grow a plurality of shells respectively on the barrier layers of the cores, thereby obtaining the semiconductor quantum dot structures each including one of the cores and a corresponding one of the shells. [0012] In the method for making the semiconductor quantum dot structures of the present disclosure, M1 is a group III element selected from the group consisting of Al, Ga, In, and combinations thereof, and C1 is a group V element selected from the group consisting of P, As, and a combination thereof. X1 is an element selected from the group consisting of N, As, S, Se, Te, F, Cl, Br, and I, and X2 is an element selected from the group consisting of Na, K, Cs, Mg, Cu, Zn, Cd, Hg, Al, Ga, and Pb. M2 is a group II element selected from the group consisting of Zn, Cd, and a combination thereof, and C2 is a group VI element selected from the group consisting of S, Se, O, Te, and combinations thereof.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw