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專利授權區


專利授權區
專利名稱(英) VOLTAGE-ENHANCED-FEEDBACK SENSE AMPLIFIER OF RESISTIVE MEMORY AND OPERATING METHOD THEREOF
專利家族 美國:10,734,039
專利權人 國立清華大學 100%
發明人 林煥庭,張孟凡
技術領域 電子電機
專利摘要(中)
A voltage-enhanced-feedback sense amplifier of a resistive memory is configured to sense a first bit line and a second bit line. The voltage-enhanced-feedback sense amplifier includes a voltage sense amplifier and a voltage-enhanced-feedback pre-amplifier. The voltage-enhanced-feedback pre-amplifier is electrically connected to the voltage sense amplifier. A first bit-line amplifying module receives a voltage level of the second input node to suppress a voltage drop of the first bit line and amplifies a voltage level of the first input node according to a voltage level of the first bit line. A second bit-line amplifying module receives the voltage level of the first input node to suppress a voltage drop of the second bit line and amplifies the voltage level of the second input node according to a voltage level of the second bit line. A margin enhanced voltage difference is greater than a read voltage difference.
聯絡資訊
承辦人姓名 李曉琪
承辦人電話 03-5715131 #31061
承辦人Email hsiaochi@mx.nthu.edu.tw
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