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專利授權區
專利名稱(英)	MID-INFRARED LIGHT EMITTING DIODE WITH GRAPHENE AND BLACK PHOSPHOROUS LAYERS AND MANUFACTURING METHOD THEREOF, SILICON PHOTONIC CIRCUIT INCLUDING THE MID-INFRARED LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
專利家族	中華民國：202220233(公開號) 美國：11,769,859
專利權人	國立清華大學 100%
發明人	劉昌樺
技術領域	生化醫藥,光電光學

專利摘要(英)
A mid-infrared light emitting diode is provided, including a graphene lower electrode layer, a black phosphorous layer, and a graphene upper electrode layer sequentially arranged along a thickness direction of the mid-infrared light emitting diode, in which the black phosphorous layer contacts the graphene lower electrode layer and the graphene upper electrode layer. A manufacturing method of the mid-infrared light emitting diode, a silicon photonic circuit and a manufacturing method thereof are also provided.

專利摘要(英)

A mid-infrared light emitting diode is provided, including a graphene lower electrode layer, a black phosphorous layer, and a graphene upper electrode layer sequentially arranged along a thickness direction of the mid-infrared light emitting diode, in which the black phosphorous layer contacts the graphene lower electrode layer and the graphene upper electrode layer. A manufacturing method of the mid-infrared light emitting diode, a silicon photonic circuit and a manufacturing method thereof are also provided.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw