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專利授權區

專利授權區
專利名稱(英)	LIGHT CONVERSION DEVICE
專利家族	美國：11,610,876
專利權人	國立清華大學 76.26% ,晶元光電股份有限公司 23.74%
發明人	廖均浩,汪湘惠,吳孟奇
技術領域	光電光學

專利摘要(英)
Therefore, the object of the disclosure is to provide a light conversion device which can alleviate at least one of the drawbacks of the prior art. According to the disclosure, a light conversion device includes a light-emitting unit, a photoelectric conversion unit, and an electroconductive bonding layer. The light-emitting unit includes a first-type region and a second-type region opposite to the first-type region. The photoelectric conversion unit includes a first-type region and a second-type region opposite to the first-type region. The photoelectric conversion unit is capable of converting an optical signal to an electrical signal when a reverse bias is applied thereto. The electroconductive bonding layer is disposed between the light-emitting unit and the photoelectric conversion unit for connecting the first-type region of the light-emitting unit with the first-type region of the photoelectric conversion unit or connecting the second-type region of the light-emitting unit with the second-type region of the photoelectric conversion unit. When the light conversion device is operated to receive a bias and an external light to make the light-emitting unit be under a forward bias and the photoelectric conversion unit be under a reverse bias, the external light irradiates the photoelectric conversion unit such that the light-emitting unit generates a modulated light which has a frequency different from that of the external light. The photoelectric conversion unit further includes a first metal electrode and a second metal electrode respectively disposed at two opposite outer surfaces of the photoelectric conversion unit. The light-emitting unit further includes a third metal electrode and a fourth metal electrode respectively disposed at two opposite outer surfaces of the light-emitting unit. The effect of the invention lies in that, in this disclosure, the light-emitting unit and the photoelectric conversion unit are first produced individually, then regions of the light-emitting unit and the photoelectric conversion unit having the same conductivity type are interconnected through the electroconductive bonding layer by the flip-chip bonding technique so as to produce the light conversion device. The light conversion device of the disclosure does not involve a complicated heterogeneous epitaxial structure, and high temperature and high pressure conditions used in wafer fusion bonding method are not required in this disclosure.

專利摘要(英)

Therefore, the object of the disclosure is to provide a light conversion device which can alleviate at least one of the drawbacks of the prior art. According to the disclosure, a light conversion device includes a light-emitting unit, a photoelectric conversion unit, and an electroconductive bonding layer. The light-emitting unit includes a first-type region and a second-type region opposite to the first-type region. The photoelectric conversion unit includes a first-type region and a second-type region opposite to the first-type region. The photoelectric conversion unit is capable of converting an optical signal to an electrical signal when a reverse bias is applied thereto. The electroconductive bonding layer is disposed between the light-emitting unit and the photoelectric conversion unit for connecting the first-type region of the light-emitting unit with the first-type region of the photoelectric conversion unit or connecting the second-type region of the light-emitting unit with the second-type region of the photoelectric conversion unit. When the light conversion device is operated to receive a bias and an external light to make the light-emitting unit be under a forward bias and the photoelectric conversion unit be under a reverse bias, the external light irradiates the photoelectric conversion unit such that the light-emitting unit generates a modulated light which has a frequency different from that of the external light. The photoelectric conversion unit further includes a first metal electrode and a second metal electrode respectively disposed at two opposite outer surfaces of the photoelectric conversion unit. The light-emitting unit further includes a third metal electrode and a fourth metal electrode respectively disposed at two opposite outer surfaces of the light-emitting unit. The effect of the invention lies in that, in this disclosure, the light-emitting unit and the photoelectric conversion unit are first produced individually, then regions of the light-emitting unit and the photoelectric conversion unit having the same conductivity type are interconnected through the electroconductive bonding layer by the flip-chip bonding technique so as to produce the light conversion device. The light conversion device of the disclosure does not involve a complicated heterogeneous epitaxial structure, and high temperature and high pressure conditions used in wafer fusion bonding method are not required in this disclosure.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw