搜尋專利授權區
關鍵字
選單
專利授權區


專利授權區
專利名稱(中) 具有磷摻雜矽奈米線的電極結構的製備方法及其電極結構
專利名稱(英) Manufacturing method of electrode structure including phosphorus-hyperdoped silicon nanowires, and electrode structure thereof
專利家族 中華民國:I818497
專利權人 國立清華大學 100%
發明人 段興宇,張哲斌
技術領域 能源科技
專利摘要(英)
A manufacturing method of electrode structure including phosphorus-hyperdoped silicon nanowires and electrode structure thereof are disclosed. The use of red P nanoparticles as a P precursor to synthesize phosphorus-hyperdoped silicon nanowires by the supercritical fluid method. In addition, the bilayer fabric electrode, which is composed of phosphorus-hyperdoped silicon nanowires and carbon nanotubes, to increase the contact of electrolyte and current collectors without the use of conductive additives and binders, is manufactured. The phosphorus-hyperdoped silicon nanowires/carbon nanotubes bilayer fabric electrode shows that the solution-grown phosphorus-hyperdoped silicon nanowires provides high cycle stability and fast charge-discharge capability, which is potential for applications on lithium-ion batteries.
聯絡資訊
承辦人姓名 李佳玲
承辦人電話 03-5715131 #62300
承辦人Email cl.lee@mx.nthu.edu.tw
我有興趣 BACK