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專利授權區

專利授權區
專利名稱(中)	METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION USING MULTIPLE CHAMBERS
專利名稱(英)	METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION USING MULTIPLE CHAMBERS
專利家族	美國：2026-0047361(公開號)
專利權人	國立清華大學 100.00%
發明人	邱博文,顏睿康
技術領域	光電光學,電子電機

專利摘要(英)
A method for implementing a thin film deposition process includes: transporting a substrate into a first chamber; feeding a precursor into the first chamber, the precursor being adsorbed on a top surface of the substrate; supplying radiant energy to at least a part of the top surface of the substrate to facilitate reaction between the precursor and the top surface of the substrate; transporting the substrate with the top surface being precursor-adsorbed into a second chamber that is separated from the first chamber and that is spatially isolated from the first chamber; feeding a reactant into the second chamber, wherein reaction between the reactant and the precursor results in a thin film forming on the top surface.

專利摘要(英)

A method for implementing a thin film deposition process includes: transporting a substrate into a first chamber; feeding a precursor into the first chamber, the precursor being adsorbed on a top surface of the substrate; supplying radiant energy to at least a part of the top surface of the substrate to facilitate reaction between the precursor and the top surface of the substrate; transporting the substrate with the top surface being precursor-adsorbed into a second chamber that is separated from the first chamber and that is spatially isolated from the first chamber; feeding a reactant into the second chamber, wherein reaction between the reactant and the precursor results in a thin film forming on the top surface.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw