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專利授權區
專利名稱(中)	異質過渡金屬硫族化物材料、其製備方法及感測器
專利名稱(英)	JANUS TRANSITION METAL DICHALCOGENIDE MATERIAL, METHOD FOR FABRICATING THEREOF, AND SENSOR
專利家族	中華民國：202613344(公開號)
專利權人	國立清華大學 100.00%
發明人	闕郁倫,彭毓仁
技術領域	光電光學,材料化工

專利摘要(中)
本發明提供一種異質過渡金屬硫族化物材料的製備方法，其包含進行加熱步驟、進行電漿形成步驟以及進行沉積步驟。加熱步驟為於加熱溫度下對硫族元素固體進行加熱以形成硫族元素氣體。電漿形成步驟為通入反應氣體以輔助硫族元素氣體形成硫族元素電漿。沉積步驟為將基板設置鄰近於硫族元素電漿，基板包含基材及鍍層，硫族元素電漿與鍍層於反應溫度與反應壓力下進行沉積反應，以形成具有優異的光學特性和表面增強拉曼散射效應的異質過渡金屬硫族化物材料。藉此，異質過渡金屬硫族化物材料可應用於表面增強拉曼散射的感測器。

專利摘要(中)

本發明提供一種異質過渡金屬硫族化物材料的製備方法，其包含進行加熱步驟、進行電漿形成步驟以及進行沉積步驟。加熱步驟為於加熱溫度下對硫族元素固體進行加熱以形成硫族元素氣體。電漿形成步驟為通入反應氣體以輔助硫族元素氣體形成硫族元素電漿。沉積步驟為將基板設置鄰近於硫族元素電漿，基板包含基材及鍍層，硫族元素電漿與鍍層於反應溫度與反應壓力下進行沉積反應，以形成具有優異的光學特性和表面增強拉曼散射效應的異質過渡金屬硫族化物材料。藉此，異質過渡金屬硫族化物材料可應用於表面增強拉曼散射的感測器。

專利摘要(英)
The present disclosure provides a method for fabricating a Janus transition metal dichalcogenide including a heating step, a plasma-forming step, and a depositing step. The heating step is to heat a chalcogenide solid to form a chalcogenide gas with a heating temperature. The plasma-forming step is to introduce a reaction gas to assist the chalcogenide gas to form a chalcogenide plasma. The depositing step is to put a substrate near the chalcogenide plasma, in which the substrate includes a base layer and a coating layer. A deposition reaction is performed between the chalcogenide plasma and the coating layer at a reaction temperature and a reaction pressure to form the Janus transition metal dichalcogenide with excellent optical properties and surface-enhanced Raman scattering effects. Therefore, the Janus transition metal dichalcogenide can be applied to a sensor with the surface-enhanced Raman scattering.

專利摘要(英)

The present disclosure provides a method for fabricating a Janus transition metal dichalcogenide including a heating step, a plasma-forming step, and a depositing step. The heating step is to heat a chalcogenide solid to form a chalcogenide gas with a heating temperature. The plasma-forming step is to introduce a reaction gas to assist the chalcogenide gas to form a chalcogenide plasma. The depositing step is to put a substrate near the chalcogenide plasma, in which the substrate includes a base layer and a coating layer. A deposition reaction is performed between the chalcogenide plasma and the coating layer at a reaction temperature and a reaction pressure to form the Janus transition metal dichalcogenide with excellent optical properties and surface-enhanced Raman scattering effects. Therefore, the Janus transition metal dichalcogenide can be applied to a sensor with the surface-enhanced Raman scattering.

聯絡資訊
承辦人姓名	黃允恬
承辦人電話	(03)571-5131#62305
承辦人Email	yuntian@mx.nthu.edu.tw