專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

專利授權區
專利名稱(英)	SCHOTTKY DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME
專利家族	中華民國：I456770 美國：8,436,361
專利權人	國立清華大學 100%
發明人	連羿韋,徐碩鴻,林于軒
技術領域	電子電機

專利摘要(英)
A Schottky diode structure and a method for fabricating the same, which are based on the principle of charge compensation, wherein a P-type gallium nitride layer is added to a Schottky diode structure, and wherein the PN junction of the P-type gallium nitride layer and the N-type gallium nitride layer decreases the non-uniformity of the surface electric field distribution, whereby the breakdown voltage of the element is raised.

專利摘要(英)

A Schottky diode structure and a method for fabricating the same, which are based on the principle of charge compensation, wherein a P-type gallium nitride layer is added to a Schottky diode structure, and wherein the PN junction of the P-type gallium nitride layer and the N-type gallium nitride layer decreases the non-uniformity of the surface electric field distribution, whereby the breakdown voltage of the element is raised.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw

電　話：

+886-3-5162301

傳　真：

+886-3-5162275

信　箱：

ocic@my.nthu.edu.tw

地　址：

300044 新竹市光復路二段101號國立清華大學創新育成大樓 111室