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專利授權區
專利名稱(中)	具超薄結晶性氧化鉿鋯之閘極介電層的鐵電電晶體裝置
專利名稱(英)	FERROELECTRIC FIELD EFFECT TRANSISTOR DEVICE
專利家族	美國：US11145740B2
專利權人	國立清華大學 100%
發明人	吳永俊,侯福居,蔡孟儒
技術領域	電子電機

專利摘要(英)
A ferroelectric field effect transistor (FeFET) device includes a semiconductor substrate and a 3D transistor. The 3D transistor includes drain and source electrodes; a channel structure that includes a channel body and a gate dielectric layer; and a gate electrode that is disposed on the gate dielectric layer and that is electrically isolated from the drain and source electrodes. The channel body is disposed between and connected to the drain and source electrodes. The gate dielectric layer covers the channel body, is made of crystalline hafnium zirconium oxide, and has a thickness ranging from 2 nm to 5 nm. The FeFET device has an on/off current ratio that is greater than 5x104.

專利摘要(英)

A ferroelectric field effect transistor (FeFET) device includes a semiconductor substrate and a 3D transistor. The 3D transistor includes drain and source electrodes; a channel structure that includes a channel body and a gate dielectric layer; and a gate electrode that is disposed on the gate dielectric layer and that is electrically isolated from the drain and source electrodes. The channel body is disposed between and connected to the drain and source electrodes. The gate dielectric layer covers the channel body, is made of crystalline hafnium zirconium oxide, and has a thickness ranging from 2 nm to 5 nm. The FeFET device has an on/off current ratio that is greater than 5x104.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw