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專利授權區
專利名稱(中)	過渡金屬硫族化物二維薄膜的製備方法
專利名稱(英)	MANUFACTURING METHOD OF TWO-DIMENSIONAL TRANSITION-METAL CHALCOGENIDE THIN FILM
專利家族	中華民國：I579398 美國：9,460,919
專利權人	國立清華大學 100.00%
發明人	謝宜真,陳雨澤,麥迪納,闕郁倫
技術領域	材料化工,能源科技,電子電機

專利摘要(中)
A manufacturing method of a two-dimensional transition-metal chalcogenide thin film includes providing a substrate, providing a reaction film, providing a source and providing a microwave. The substrate is made of material having dipole moments. The reaction film, disposed on the substrate, has a predefined thickness and includes a transition-metal compound. The source includes S, Se, or Te. The substrate is heated by the microwave to produce a heat energy to the reaction film and the source; thus a chemical reaction takes place and the two-dimensional transition-metal chalcogenide thin film is formed on the substrate. The two-dimensional transition-metal thin film includes a plurality of elements, and each of the elements aligns along a predefined direction by controlling a value of the predefined thickness.

專利摘要(中)

A manufacturing method of a two-dimensional transition-metal chalcogenide thin film includes providing a substrate, providing a reaction film, providing a source and providing a microwave. The substrate is made of material having dipole moments. The reaction film, disposed on the substrate, has a predefined thickness and includes a transition-metal compound. The source includes S, Se, or Te. The substrate is heated by the microwave to produce a heat energy to the reaction film and the source; thus a chemical reaction takes place and the two-dimensional transition-metal chalcogenide thin film is formed on the substrate. The two-dimensional transition-metal thin film includes a plurality of elements, and each of the elements aligns along a predefined direction by controlling a value of the predefined thickness.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw