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專利授權區
專利名稱(中) 製備過渡金屬硫族化物之方法
專利名稱(英) METHOD OF FABRICATING TRANSITION METAL DICHALCOGENIDE
專利家族 中華民國:I551539
大陸:3557750
美國:9,840,764
專利權人 國立清華大學 100.00%
發明人 顏文群,陳雨澤,蘇登瑜,李建廣,麥迪納,闕郁倫
技術領域 材料化工,光電光學,電子電機
專利摘要(中)
A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.
聯絡資訊
承辦人姓名 楊美茹
承辦人電話 03-5715131 #62305
承辦人Email mjyang2@mx.nthu.edu.tw
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