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專利授權區

專利授權區
專利名稱(中)	二維半導體元件及用於其中的電極
專利名稱(英)	TWO-DIMENSIONAL SEMICONDUCTOR DEVICE AND ELECTRODE USED THEREIN
專利家族	中華民國：202437537(公開號) 美國：2024-0313080(公開號)
專利權人	國立清華大學 100%
發明人	邱博文,岑尚仁,鄭基君
技術領域	光電光學,電子電機

專利摘要(英)
An electrode for a two-dimensional semiconductor device includes a contact electrode and a metal electrode formed thereon, wherein the material of the contact electrode is a semi-metal alloy, and the semi-metal alloy is composed of several semi-metal elements or composed of at least one semi-metal element and alloy material thereof. A two-dimensional semiconductor device includes a substrate, a two-dimensional semiconductor material layer, and a plurality of electrodes. The two-dimensional semiconductor material layer is formed on the substrate, and the electrodes are formed on the two-dimensional semiconductor material layer, wherein the electrodes include the contact electrode and the metal electrode, and the contact electrode is between the metal electrode and the two-dimensional semiconductor material layer. Accordingly, the semi-metal alloy causes a gap slightly smaller than the Van der Waals distance formed between the metal electrode and two-dimensional semiconductor material respectively, and thus the stability of the structure can be kept, and the coupling of outer orbital electrons between the metal electrode and two-dimensional semiconductor material can be reduced.

專利摘要(英)

An electrode for a two-dimensional semiconductor device includes a contact electrode and a metal electrode formed thereon, wherein the material of the contact electrode is a semi-metal alloy, and the semi-metal alloy is composed of several semi-metal elements or composed of at least one semi-metal element and alloy material thereof. A two-dimensional semiconductor device includes a substrate, a two-dimensional semiconductor material layer, and a plurality of electrodes. The two-dimensional semiconductor material layer is formed on the substrate, and the electrodes are formed on the two-dimensional semiconductor material layer, wherein the electrodes include the contact electrode and the metal electrode, and the contact electrode is between the metal electrode and the two-dimensional semiconductor material layer. Accordingly, the semi-metal alloy causes a gap slightly smaller than the Van der Waals distance formed between the metal electrode and two-dimensional semiconductor material respectively, and thus the stability of the structure can be kept, and the coupling of outer orbital electrons between the metal electrode and two-dimensional semiconductor material can be reduced.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw