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專利授權區

專利授權區
專利名稱(中)	二維半導體元件及用於其中的電極
專利名稱(英)	TWO-DIMENSIONAL SEMICONDUCTOR DEVICE AND ELECTRODE USED THEREIN
專利家族	中華民國：I861758 美國：2024-0313080(公開號)
專利權人	國立清華大學 100.00%
發明人	邱博文,岑尚仁,鄭基君
技術領域	光電光學,電子電機

專利摘要(中)
一種二維半導體元件用電極包括接觸電極以及形成於其上的金屬電極，其中所述接觸電極的材料是半金屬合金，且所述半金屬合金係由數種半金屬元素或者至少一種半金屬元素與其合金材料所構成。一種二維半導體元件包括基板、二維半導體層與數個電極。二維半導體層形成於所述基板上，電極形成於二維半導體層上，其中所述電極包括上述接觸電極以及上述金屬電極，且所述接觸電極介於金屬電極與二維半導體層間，而使得半金屬合金在金屬電極與二維半導體間，各形成一個略小於凡德瓦距離的空隙，進而確保結構的穩定性與減少二維半導體與金屬電極間之外層軌域電子的耦合。

專利摘要(中)

一種二維半導體元件用電極包括接觸電極以及形成於其上的金屬電極，其中所述接觸電極的材料是半金屬合金，且所述半金屬合金係由數種半金屬元素或者至少一種半金屬元素與其合金材料所構成。一種二維半導體元件包括基板、二維半導體層與數個電極。二維半導體層形成於所述基板上，電極形成於二維半導體層上，其中所述電極包括上述接觸電極以及上述金屬電極，且所述接觸電極介於金屬電極與二維半導體層間，而使得半金屬合金在金屬電極與二維半導體間，各形成一個略小於凡德瓦距離的空隙，進而確保結構的穩定性與減少二維半導體與金屬電極間之外層軌域電子的耦合。

專利摘要(英)
An electrode for a two-dimensional semiconductor device includes a contact electrode and a metal electrode formed thereon, wherein the material of the contact electrode is a semi-metal alloy, and the semi-metal alloy is composed of several semi-metal elements or composed of at least one semi-metal element and alloy material thereof. A two-dimensional semiconductor device includes a substrate, a two-dimensional semiconductor material layer, and a plurality of electrodes. The two-dimensional semiconductor material layer is formed on the substrate, and the electrodes are formed on the two-dimensional semiconductor material layer, wherein the electrodes include the contact electrode and the metal electrode, and the contact electrode is between the metal electrode and the two-dimensional semiconductor material layer. Accordingly, the semi-metal alloy causes a gap slightly smaller than the Van der Waals distance formed between the metal electrode and two-dimensional semiconductor material respectively, and thus the stability of the structure can be kept, and the coupling of outer orbital electrons between the metal electrode and two-dimensional semiconductor material can be reduced.

專利摘要(英)

An electrode for a two-dimensional semiconductor device includes a contact electrode and a metal electrode formed thereon, wherein the material of the contact electrode is a semi-metal alloy, and the semi-metal alloy is composed of several semi-metal elements or composed of at least one semi-metal element and alloy material thereof. A two-dimensional semiconductor device includes a substrate, a two-dimensional semiconductor material layer, and a plurality of electrodes. The two-dimensional semiconductor material layer is formed on the substrate, and the electrodes are formed on the two-dimensional semiconductor material layer, wherein the electrodes include the contact electrode and the metal electrode, and the contact electrode is between the metal electrode and the two-dimensional semiconductor material layer. Accordingly, the semi-metal alloy causes a gap slightly smaller than the Van der Waals distance formed between the metal electrode and two-dimensional semiconductor material respectively, and thus the stability of the structure can be kept, and the coupling of outer orbital electrons between the metal electrode and two-dimensional semiconductor material can be reduced.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw