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專利授權區
專利名稱(中)	半導體元件及其製造方法
專利名稱(英)	SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
專利家族	中華民國：I923025 美國：2026-0052922(公開號)
專利權人	國立清華大學 100.00%
發明人	邱博文,楊昱倫
技術領域	材料化工,電子電機

專利摘要(中)
一種半導體元件的製造方法，包含在金屬和半導體間形成凡德瓦結構。方法進一步包含: 在二維半導體層上沉積保護層，再圖案化保護層與二維半導體層，在保護層之上形成第一電極與第二電極後，完全去除所述保護層，以在第一電極與半導體層之間以及第二電極與半導體層之間形成凡德瓦接觸結構。

專利摘要(英)
A method for manufacturing a semiconductor device includes forming a van der Waals structure between metal and semiconductor. The method further includes: depositing a protective layer on a two-dimensional semiconductor layer, then patterning the protective layer and the two-dimensional semiconductor layer, forming a first electrode and a second electrode on the protective layer, and completely removing the protective layer, thereby forming a van der Waals contact between the first electrode and the semiconductor layer, as well as between the second electrode and the semiconductor layer.

專利摘要(英)

A method for manufacturing a semiconductor device includes forming a van der Waals structure between metal and semiconductor. The method further includes: depositing a protective layer on a two-dimensional semiconductor layer, then patterning the protective layer and the two-dimensional semiconductor layer, forming a first electrode and a second electrode on the protective layer, and completely removing the protective layer, thereby forming a van der Waals contact between the first electrode and the semiconductor layer, as well as between the second electrode and the semiconductor layer.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw