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專利授權區

專利授權區
專利名稱(中)	穩定性佳的量子點及其製作方法
專利名稱(英)	Quantum dot with excellent stability and method for making the same
專利家族	中華民國：I741954 大陸：CN114958334A(公開號) 美國：US11685861B2
專利權人	國立清華大學 100.00%
發明人	陳學仕,葉常偉
技術領域	光電光學

專利摘要(中)
一種穩定性佳的量子點，其包括一由M1C1之一第一化學式所構成的M1C1核，及複數由M2C2之一第二化學式所構成的M2C2內殼。M1C1核包括一具有一包括複數晶面且皆為非氧化晶面的第一族群晶面，與一包括複數晶面皆為氧化晶面的第二族群晶面的表面。各M2C2內殼分別對應成長在M1C1核的第一族群晶面的各晶面上。M1是至少一選自由下列所構成之群組的元素：Al、Ga，及In，且C1是至少一選自由下列所構成之群組的元素：P，及As。M2是至少一選自由下列所構成之群組的元素：Zn、Pb、Ag、Cu、Mn、Cd，及Mg，且C2是至少一選自由下列所構成之群組的元素：S、Se、O、F、Cl、Br、I，及Te。

專利摘要(中)

一種穩定性佳的量子點，其包括一由M1C1之一第一化學式所構成的M1C1核，及複數由M2C2之一第二化學式所構成的M2C2內殼。M1C1核包括一具有一包括複數晶面且皆為非氧化晶面的第一族群晶面，與一包括複數晶面皆為氧化晶面的第二族群晶面的表面。各M2C2內殼分別對應成長在M1C1核的第一族群晶面的各晶面上。M1是至少一選自由下列所構成之群組的元素：Al、Ga，及In，且C1是至少一選自由下列所構成之群組的元素：P，及As。M2是至少一選自由下列所構成之群組的元素：Zn、Pb、Ag、Cu、Mn、Cd，及Mg，且C2是至少一選自由下列所構成之群組的元素：S、Se、O、F、Cl、Br、I，及Te。

專利摘要(英)
This invention provides a quantum dot with excellent stability which comprises a M1C1core made of a first formula of M1C1, and a plurality of M2C2inner shells made of a second formula of M2C2. Said M1C1core includes a surface having a first family of crystallographic planes with a plurality of crystallographic planes and all non-oxidized crystal planes, and a second family of crystallographic planes with a plurality of crystallographic planes and all oxidized crystal planes. Each of said M2C2inner shells growth on a corresponding one of each of said crystallographic planes of said first family of crystallographic planes of said core. M1 is at least one of element selected form the group consisting of Al, Ga, and In, and C1 is at least one of element selected form the group consisting of P, and As. M2 is at least one of element selected form the group consisting of Zn, Pb, Ag, Cu, Mn, Cd, and Mg, and C2 is at least one of element selected form the group consisting of S, Se, O, F, Cl, Br, I, and Te.

專利摘要(英)

This invention provides a quantum dot with excellent stability which comprises a M1C1core made of a first formula of M1C1, and a plurality of M2C2inner shells made of a second formula of M2C2. Said M1C1core includes a surface having a first family of crystallographic planes with a plurality of crystallographic planes and all non-oxidized crystal planes, and a second family of crystallographic planes with a plurality of crystallographic planes and all oxidized crystal planes. Each of said M2C2inner shells growth on a corresponding one of each of said crystallographic planes of said first family of crystallographic planes of said core. M1 is at least one of element selected form the group consisting of Al, Ga, and In, and C1 is at least one of element selected form the group consisting of P, and As. M2 is at least one of element selected form the group consisting of Zn, Pb, Ag, Cu, Mn, Cd, and Mg, and C2 is at least one of element selected form the group consisting of S, Se, O, F, Cl, Br, I, and Te.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw