專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

搜尋專利授權區

關鍵字

» 新增關鍵字

選單

專利授權區

專利授權區
專利名稱(英)	INFRARED SENSOR
專利家族	中華民國：I886778 大陸：CN120435109A(公開號) 美國：US2025/0248144A1(公開號)
專利權人	國立清華大學 100.00%
發明人	陳學仕,黃培丞,林宸德
技術領域	光電光學

專利摘要(英)
An infrared sensor includes a substrate, a first electrode, a light-sensing unit, and a second electrode. The substrate is infrared-transmissible. The first electrode is disposed on a surface of the substrate and is infrared-transmissible. The light-sensing unit is disposed on a surface of the first electrode opposite to the substrate, is capable of absorbing and sensing infrared light, and includes a zinc oxide (ZnO)-based layer, a first lead sulfide (PbS)-based modification layer, and a second PbS-based modification layer that are sequentially stacked from the surface of the first electrode. The first PbS-based modification layer includes halide ion-modified PbS, and the second PbS-based modification layer includes thiol-modified PbS. In addition, the second electrode is disposed on a surface of the light-sensing unit opposite to the substrate, and is capable of forming a current flow path by cooperating with the light-sensing unit and the first electrode.

專利摘要(英)

An infrared sensor includes a substrate, a first electrode, a light-sensing unit, and a second electrode. The substrate is infrared-transmissible. The first electrode is disposed on a surface of the substrate and is infrared-transmissible. The light-sensing unit is disposed on a surface of the first electrode opposite to the substrate, is capable of absorbing and sensing infrared light, and includes a zinc oxide (ZnO)-based layer, a first lead sulfide (PbS)-based modification layer, and a second PbS-based modification layer that are sequentially stacked from the surface of the first electrode. The first PbS-based modification layer includes halide ion-modified PbS, and the second PbS-based modification layer includes thiol-modified PbS. In addition, the second electrode is disposed on a surface of the light-sensing unit opposite to the substrate, and is capable of forming a current flow path by cooperating with the light-sensing unit and the first electrode.

聯絡資訊
承辦人姓名	黃允恬
承辦人電話	(03)571-5131#62305
承辦人Email	yuntian@mx.nthu.edu.tw