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專利授權區

專利授權區
專利名稱(中)	波導與主動元件的整合結構及其製造方法
專利名稱(英)	INTEGRATED STRUCTURE OF WAVEGUIDE AND ACTIVE COMPONENT AND MANUFACTURING METHOD THEREOF
專利家族	中華民國：I846531
專利權人	國立清華大學 100% ,國立清華大學 100%
發明人	李明昌
技術領域	光電光學,電子電機

專利摘要(英)
A manufacturing method for an integrated structure of a waveguide and an active component is proposed. The manufacturing method includes providing a substrate including a dielectric layer and a semiconductor layer, and the semiconductor layer includes a waveguide region, a transition region and an active component region; etching the semiconductor layer to form a plurality of waveguide trenches; depositing a waveguide material on the semiconductor layer to form a deposition layer, and the waveguide trenches are filled with the waveguide material; performing a polishing process on the deposition layer to expose a surface; performing an ion implantation process on the semiconductor layer to form a first doped part and a second doped part; etching the waveguide region, the transition region and the active component region to form a waveguide structure, a transition structure and an active component structure; depositing a cover layer on the dielectric layer; forming two via holes and two contact pads in the cover layer. Therefore, the waveguide structure and the active component structure can be integrated on the dielectric layer.

專利摘要(英)

A manufacturing method for an integrated structure of a waveguide and an active component is proposed. The manufacturing method includes providing a substrate including a dielectric layer and a semiconductor layer, and the semiconductor layer includes a waveguide region, a transition region and an active component region; etching the semiconductor layer to form a plurality of waveguide trenches; depositing a waveguide material on the semiconductor layer to form a deposition layer, and the waveguide trenches are filled with the waveguide material; performing a polishing process on the deposition layer to expose a surface; performing an ion implantation process on the semiconductor layer to form a first doped part and a second doped part; etching the waveguide region, the transition region and the active component region to form a waveguide structure, a transition structure and an active component structure; depositing a cover layer on the dielectric layer; forming two via holes and two contact pads in the cover layer. Therefore, the waveguide structure and the active component structure can be integrated on the dielectric layer.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw