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專利授權區

專利授權區
專利名稱(英)	SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
專利家族	中華民國：I890422 美國：2025-0338526(公開號)
專利權人	國立清華大學 100.00%
發明人	黃敬源,王浩然
技術領域	光電光學

專利摘要(英)
A semiconductor device includes a substrate and units. Each unit includes a drift layer, a fin, a first, second, and third doped region, and a first gate structure. The drift layer is located on a first surface of the substrate. The fin is located on a first surface of the drift layer. The first doped region is located in the fin and extends from a top surface of the fin toward the drift layer. The second doped region is located in the substrate and extends from a second surface of the substrate toward the first surface of the substrate. The third doped region is located in the drift layer and extends from the first surface of the drift layer toward a second surface of the drift layer. The first gate structure is between the first and third doped regions and extends to the first surface of the drift layer.

專利摘要(英)

A semiconductor device includes a substrate and units. Each unit includes a drift layer, a fin, a first, second, and third doped region, and a first gate structure. The drift layer is located on a first surface of the substrate. The fin is located on a first surface of the drift layer. The first doped region is located in the fin and extends from a top surface of the fin toward the drift layer. The second doped region is located in the substrate and extends from a second surface of the substrate toward the first surface of the substrate. The third doped region is located in the drift layer and extends from the first surface of the drift layer toward a second surface of the drift layer. The first gate structure is between the first and third doped regions and extends to the first surface of the drift layer.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw