專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

搜尋專利授權區

關鍵字

» 新增關鍵字

選單

專利授權區

專利授權區
專利名稱(中)	過渡金屬硫族化物二維薄膜的製備方法
專利名稱(英)	MANUFACTURING METHOD OF TWO-DIMENSIONAL TRANSITION-METAL CHALCOGENIDE THIN FILM
專利家族	中華民國：I579398 美國：9,460,919
專利權人	國立清華大學 100.00%
發明人	謝宜真,陳雨澤,麥迪納,闕郁倫
技術領域	材料化工,能源科技,電子電機

專利摘要(中)
本發明提供一種過渡金屬硫族化物二維薄膜的製備方法，包含提供基板、提供作用層、提供反應源及提供微波，基板為具有偶極矩的材料製成，作用層設於基板上，作用層具有預設厚度且包含過渡金屬化合物。微波使基板產生熱能，以前述熱能使反應源與作用層產生反應並於基板上形成過渡金屬硫族化物二維薄膜，其中過渡金屬硫族化物二維薄膜包含複數單元，控制預設厚度使各單元沿預設方向排列。藉此可減少過渡金屬硫族化物二維薄膜生成的過程中所需要的熱預算成本，並藉由預設厚度的控制進一步調控過渡金屬硫族化物二維薄膜中單元的排列方向。 The present disclosure provides a manufacturing method of two-dimensional transition-metal chalcogenide thin film which includes providing a substrate, a reaction film, a source, and a microwave. The substrate is made of material which contains dipoles. The reaction film is disposed on the substrate and has a predefined thickness. The substrate heated by the microwave produces a heat energy to the reaction film and the source, a chemical reaction takes place and a two-dimensional transition-metal chalcogenide thin film is formed on the substrate. The two-dimensional transition-metal chalcogenide thin film includes a plurality of elements. The elements can align in a predefined direction by controlling the value of the predefined thickness. Therefore, the high cost of the heat energy during the manufacturing process of the two-dimensional transition-metal chalcogenide thin film can be reduced, and the aligning direction of elements of the two-dimensional transition-metal chalcogenide thin film can be controlled via controlling the predefined thickness.

專利摘要(中)

本發明提供一種過渡金屬硫族化物二維薄膜的製備方法，包含提供基板、提供作用層、提供反應源及提供微波，基板為具有偶極矩的材料製成，作用層設於基板上，作用層具有預設厚度且包含過渡金屬化合物。微波使基板產生熱能，以前述熱能使反應源與作用層產生反應並於基板上形成過渡金屬硫族化物二維薄膜，其中過渡金屬硫族化物二維薄膜包含複數單元，控制預設厚度使各單元沿預設方向排列。藉此可減少過渡金屬硫族化物二維薄膜生成的過程中所需要的熱預算成本，並藉由預設厚度的控制進一步調控過渡金屬硫族化物二維薄膜中單元的排列方向。 The present disclosure provides a manufacturing method of two-dimensional transition-metal chalcogenide thin film which includes providing a substrate, a reaction film, a source, and a microwave. The substrate is made of material which contains dipoles. The reaction film is disposed on the substrate and has a predefined thickness. The substrate heated by the microwave produces a heat energy to the reaction film and the source, a chemical reaction takes place and a two-dimensional transition-metal chalcogenide thin film is formed on the substrate. The two-dimensional transition-metal chalcogenide thin film includes a plurality of elements. The elements can align in a predefined direction by controlling the value of the predefined thickness. Therefore, the high cost of the heat energy during the manufacturing process of the two-dimensional transition-metal chalcogenide thin film can be reduced, and the aligning direction of elements of the two-dimensional transition-metal chalcogenide thin film can be controlled via controlling the predefined thickness.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw