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專利授權區
專利名稱(中)	半導體量子點及其製法
專利名稱(英)	Semiconductor quantum dots and method for making the same
專利家族	中華民國：I843173 美國：US2024/0052241A1(公開號)
專利權人	國立清華大學 100%
發明人	陳學仕,葉常偉,陳政揚
技術領域	材料化工,光電光學

專利摘要(英)
A semiconductor quantum dot comprises a core and a M2C2 shell. Said core includes a M1C1 seed, a M1C1 core layer grown on said M1C1 seed, and a barrier layer grown on said M1C1 core layer. A surface of said M1C1 seed has a plurality of first areas that is inactive with oxygen, and a plurality of second areas that is easily reactive with oxygen. Said M1C1 core layer has a plurality of first regions located on corresponding to each of the first area of the M1C1 seed, and a plurality of second regions located on corresponding to each of the second area of the M1C1 seed. A thickness of each of said first regions is greater than that of each of said second regions. Said barrier is made from M1X1 or X2C1. Said M2C2 shell grows on said barrier layer of said core. M1 is at least one of the III group elements selected from the group consisting of Al, Ga, and In. C1 is at least one of the V group elements selected from the group consisting of P, and As. X1 is one of the element selected from the group consisting of N, As, S, Se, Te, F, Cl, Br, and I. X2 is one of the element selected from the group consisting of Na, K, Cs, Mg, Cu, Zn, Cd, Hg, Al, Ga, and Pb. M2 is at least one of the II group elements selected from the group consisting of Zn, and Cd. C2 is at least one of the VI group elements selected from the group consisting of S, Se, O, and Te.

專利摘要(英)

A semiconductor quantum dot comprises a core and a M2C2 shell. Said core includes a M1C1 seed, a M1C1 core layer grown on said M1C1 seed, and a barrier layer grown on said M1C1 core layer. A surface of said M1C1 seed has a plurality of first areas that is inactive with oxygen, and a plurality of second areas that is easily reactive with oxygen. Said M1C1 core layer has a plurality of first regions located on corresponding to each of the first area of the M1C1 seed, and a plurality of second regions located on corresponding to each of the second area of the M1C1 seed. A thickness of each of said first regions is greater than that of each of said second regions. Said barrier is made from M1X1 or X2C1. Said M2C2 shell grows on said barrier layer of said core. M1 is at least one of the III group elements selected from the group consisting of Al, Ga, and In. C1 is at least one of the V group elements selected from the group consisting of P, and As. X1 is one of the element selected from the group consisting of N, As, S, Se, Te, F, Cl, Br, and I. X2 is one of the element selected from the group consisting of Na, K, Cs, Mg, Cu, Zn, Cd, Hg, Al, Ga, and Pb. M2 is at least one of the II group elements selected from the group consisting of Zn, and Cd. C2 is at least one of the VI group elements selected from the group consisting of S, Se, O, and Te.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw