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專利授權區
專利名稱(中)	半導體裝置的製法及其製品
專利名稱(英)	Method for making semiconductor device and the product made therefrom
專利家族	中華民國：202544897(公開號) 大陸：CN120936055A(公開號)
專利權人	國立清華大學 100.00%
發明人	闕郁倫,劉欣睿,蘇麻呀
技術領域	材料化工,電子電機

專利摘要(中)
一種半導體裝置，包括一半導體基板單元、一層形成在該半導體基板單元上並由一過渡金屬二硫族化物所構成的二維材料層、兩個單晶體，及兩金屬電極層。該等單晶體間隔地位在該二維材料層之上。各個單晶體是由一第一金屬材料所構成或是一由該第一金屬材料與一第二金屬材料所構成的介金屬化合物。該等金屬電極層由該第二金屬材料所構成，且各個金屬電極層接觸各自所對應的單晶體。在本發明中，該第一金屬材料具有一第一熔點，且該第二金屬材料具有一第二熔點，該第一熔點低於該第二熔點。本發明亦提供一種前述半導體裝置的製法。

專利摘要(中)

一種半導體裝置，包括一半導體基板單元、一層形成在該半導體基板單元上並由一過渡金屬二硫族化物所構成的二維材料層、兩個單晶體，及兩金屬電極層。該等單晶體間隔地位在該二維材料層之上。各個單晶體是由一第一金屬材料所構成或是一由該第一金屬材料與一第二金屬材料所構成的介金屬化合物。該等金屬電極層由該第二金屬材料所構成，且各個金屬電極層接觸各自所對應的單晶體。在本發明中，該第一金屬材料具有一第一熔點，且該第二金屬材料具有一第二熔點，該第一熔點低於該第二熔點。本發明亦提供一種前述半導體裝置的製法。

專利摘要(英)
A semiconductor device includes a semiconductor substrate unit, a two-dimensional material layer formed on the semiconductor substrate unit and composed of a transition metal dichalcogenides, two single crystals, and two metallic electrode layers. The single crystals are spaced apart over the two-dimensional material layer. Each single crystal is composed of a first metal material or an intermetallic compound composed of the first metal material and a second metal material. The metallic electrode layers are composed of the second metal material and each metallic electrode layer contacts a respective corresponding single crystal. In the present disclosure, the first metal material has a first melting point, and the second metal material has a second melting point, and the first melting point is lower than the second melting point. This invention also provides a method for making the semiconductor device stated above.

專利摘要(英)

A semiconductor device includes a semiconductor substrate unit, a two-dimensional material layer formed on the semiconductor substrate unit and composed of a transition metal dichalcogenides, two single crystals, and two metallic electrode layers. The single crystals are spaced apart over the two-dimensional material layer. Each single crystal is composed of a first metal material or an intermetallic compound composed of the first metal material and a second metal material. The metallic electrode layers are composed of the second metal material and each metallic electrode layer contacts a respective corresponding single crystal. In the present disclosure, the first metal material has a first melting point, and the second metal material has a second melting point, and the first melting point is lower than the second melting point. This invention also provides a method for making the semiconductor device stated above.

聯絡資訊
承辦人姓名	黃允恬
承辦人電話	(03)571-5131#62305
承辦人Email	yuntian@mx.nthu.edu.tw