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專利授權區
專利名稱(英)	SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
專利家族	中華民國：I912921 美國：2026-0075919(公開號)
專利權人	國立清華大學 100.00%
發明人	黃敬源,李宗霖,徐碩鴻
技術領域	通信傳輸,資訊工程,電子電機

專利摘要(英)
A semiconductor structure includes a pad layer, a trench, a gate and two protecting parts. The trench passes through the pad layer along a direction. The gate is in T-shape, and is disposed on the pad layer, and extends into the trench. The gate includes a first part and a second part. The first part is disposed on the pad layer, and includes two side walls and a first metal layer. The second part is connected to the first part, and is located in the trench. The two protecting parts are respectively covered the two side walls, and the first metal layer is disposed between the two protecting parts. Thus, the semiconductor structure can prevent the element characteristics from being affected.

專利摘要(英)

A semiconductor structure includes a pad layer, a trench, a gate and two protecting parts. The trench passes through the pad layer along a direction. The gate is in T-shape, and is disposed on the pad layer, and extends into the trench. The gate includes a first part and a second part. The first part is disposed on the pad layer, and includes two side walls and a first metal layer. The second part is connected to the first part, and is located in the trench. The two protecting parts are respectively covered the two side walls, and the first metal layer is disposed between the two protecting parts. Thus, the semiconductor structure can prevent the element characteristics from being affected.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw