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專利授權區

專利授權區
專利名稱(英)	TWO-DIMENSIONAL SEMICONDUCTOR DEVICE AND ELECTRODE USED THEREIN
專利家族	中華民國：202437537(公開號) 美國：2024-0313080(公開號)
專利權人	國立清華大學 100%
發明人	邱博文,岑尚仁,鄭基君
技術領域	光電光學,電子電機

專利摘要(英)
A two-dimensional semiconductor device and an electrode used therein are provided. The material of the contact electrode is a semi-metal alloy, and the semi-metal alloy is composed of several semi-metal elements or at least one semi-metal element and an alloy material thereof. The two-dimensional semiconductor device includes a substrate, a two-dimensional semiconductor material layer formed on the substrate, and electrodes formed on the two-dimensional semiconductor material layer. The electrodes include the contact electrode and the metal electrode, and the contact electrode is between the metal electrode and the two-dimensional semiconductor material layer, so that the semi-metal alloy forms a space gap slightly smaller than a Van der Waals distance on top of the two-dimensional semiconductor to ensure the stability of the structure while preventing/minimizing the coupling of outer orbital electrons between the two-dimensional semiconductor and the electrode.

專利摘要(英)

A two-dimensional semiconductor device and an electrode used therein are provided. The material of the contact electrode is a semi-metal alloy, and the semi-metal alloy is composed of several semi-metal elements or at least one semi-metal element and an alloy material thereof. The two-dimensional semiconductor device includes a substrate, a two-dimensional semiconductor material layer formed on the substrate, and electrodes formed on the two-dimensional semiconductor material layer. The electrodes include the contact electrode and the metal electrode, and the contact electrode is between the metal electrode and the two-dimensional semiconductor material layer, so that the semi-metal alloy forms a space gap slightly smaller than a Van der Waals distance on top of the two-dimensional semiconductor to ensure the stability of the structure while preventing/minimizing the coupling of outer orbital electrons between the two-dimensional semiconductor and the electrode.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw