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專利授權區

專利授權區
專利名稱(英)	Field Effect Transistor Based Sensor
專利家族	中華民國：I375029 美國：7,829,918
專利權人	國立清華大學 100%
發明人	果尚志,葉哲良
技術領域	電子電機

專利摘要(中)
The invention discloses a FET based sensor. The FET based sensor according to an embodiment of the invention includes a substrate, an InN material layer, a source terminal and a drain terminal. The InN material layer is formed over the substrate and has an upper surface. The upper surface thereon provides an analyte sensing region. The InN material layer serves as a current channel between the source terminal and the drain terminal. Thereby, ions adsorbed by the analyte sensing region induce a variation of a current flowing through the current channel, and the variation is further interpreted as a characteristic of the analyte.

專利摘要(中)

The invention discloses a FET based sensor. The FET based sensor according to an embodiment of the invention includes a substrate, an InN material layer, a source terminal and a drain terminal. The InN material layer is formed over the substrate and has an upper surface. The upper surface thereon provides an analyte sensing region. The InN material layer serves as a current channel between the source terminal and the drain terminal. Thereby, ions adsorbed by the analyte sensing region induce a variation of a current flowing through the current channel, and the variation is further interpreted as a characteristic of the analyte.

聯絡資訊
承辦人姓名	劉千綺
承辦人電話	03-571-5131 #31181
承辦人Email	chienchi@mx.nthu.edu.tw