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專利授權區

專利授權區
專利名稱(英)	VAPOR CHAMBER DEVICE
專利家族	中華民國：I889409 大陸：CN 121206936 A(公開號) 美國：US-2025-0393167-A1(公開號)
專利權人	國立清華大學 100.00%
發明人	王訓忠
技術領域	能源科技,機械結構

專利摘要(英)
A vapor chamber device includes a first shell, a second shell, and a second capillary structure. The first shell includes a first capillary structure located on an inner surface of the first plate. The inner surface includes a first region and a second region. The first capillary structure includes first trenches formed between first ridges and second trenches formed between second ridges. The first ridges and the first trenches are located in the first region, and the second ridges and the second trenches are located in the second region. A width of each of the second trenches is less than a width of each of the first trenches. The second shell is stacked on the first shell and includes a plurality of supporting posts protruding from a second plate. The second capillary structure is disposed between the first capillary structure and the supporting posts of the second shell.

專利摘要(英)

A vapor chamber device includes a first shell, a second shell, and a second capillary structure. The first shell includes a first capillary structure located on an inner surface of the first plate. The inner surface includes a first region and a second region. The first capillary structure includes first trenches formed between first ridges and second trenches formed between second ridges. The first ridges and the first trenches are located in the first region, and the second ridges and the second trenches are located in the second region. A width of each of the second trenches is less than a width of each of the first trenches. The second shell is stacked on the first shell and includes a plurality of supporting posts protruding from a second plate. The second capillary structure is disposed between the first capillary structure and the supporting posts of the second shell.

聯絡資訊
承辦人姓名	楊慧敏
承辦人電話	(03)571-5131 #31181
承辦人Email	hmyang@mx.nthu.edu.tw