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專利授權區
專利名稱(中)	可降低晶圓壞率的晶塊切割方法
專利名稱(英)	INGOT CUTTING METHOD CAPABLE OF REDUCING WAFER DAMAGE PERCENTAGE
專利家族	中華民國：I552219 美國：9,205,572B1
專利權人	國立清華大學 100.00%
發明人	葉哲良
技術領域	機械結構

專利摘要(中)
An ingot cutting method capable of reducing wafer damage percentage, comprising: forming a layer of nanostructures on at least one surface of an ingot; depositing a buffer layer on the layer of nanostructures; fixing the ingot to a mounting plate by applying a layer of epoxy between the buffer layer and the mounting plate; performing a dicing process on the ingot to get a plurality of wafers; and performing an epoxy removal process on the plurality of wafers.

專利摘要(中)

An ingot cutting method capable of reducing wafer damage percentage, comprising: forming a layer of nanostructures on at least one surface of an ingot; depositing a buffer layer on the layer of nanostructures; fixing the ingot to a mounting plate by applying a layer of epoxy between the buffer layer and the mounting plate; performing a dicing process on the ingot to get a plurality of wafers; and performing an epoxy removal process on the plurality of wafers.

聯絡資訊
承辦人姓名	劉千綺
承辦人電話	03-571-5131 #31181
承辦人Email	chienchi@mx.nthu.edu.tw