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專利授權區
專利名稱(中)	於銅銦鎵硒製備三維結構的方法
專利名稱(英)	Method for producing a three-dimensional structure on a copper indium gallium selenide compound
專利家族	中華民國：I480947 美國：8,815,633
專利權人	國立清華大學 100.00%
發明人	顏鈺庭,王乙仲,鄭湘穎,闕郁倫
技術領域	材料化工,光電光學

專利摘要(中)
A method of fabricating a 3-dimensional structure on a copper-indium-gallium-diselenide material comprises steps: preparing a CIGS (Copper Indium Gallium Diselenide) substrate, and defining two types of regions complementary to each other on the CIGS substrate; providing a mold absorbing an etching solution that can etch the CIGS substrate instead of the mold; aligning the mold to the two types of regions, and allowing the etching solution to flow out from the mold and contact with the two types of regions to etch the two types of regions for generating a level drop between the two types of regions and forming a 3-dimensional (3D) structure on the CIGS substrate. As a result, the present invention can fabricate a large-area 3D structure on a CIGS substrate rapidly without using expensive equipments or complicated processes.

專利摘要(中)

A method of fabricating a 3-dimensional structure on a copper-indium-gallium-diselenide material comprises steps: preparing a CIGS (Copper Indium Gallium Diselenide) substrate, and defining two types of regions complementary to each other on the CIGS substrate; providing a mold absorbing an etching solution that can etch the CIGS substrate instead of the mold; aligning the mold to the two types of regions, and allowing the etching solution to flow out from the mold and contact with the two types of regions to etch the two types of regions for generating a level drop between the two types of regions and forming a 3-dimensional (3D) structure on the CIGS substrate. As a result, the present invention can fabricate a large-area 3D structure on a CIGS substrate rapidly without using expensive equipments or complicated processes.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw