A three-dimensional resistive random access memory structure is proposed. The three-dimensional resistive random access memory structure includes a base layer, a first layer, a second layer and a third layer. The first layer includes three first conductive layers and two first vias. Two of the three first conductive layers are electrically connected to the two first vias. The second layer includes four second conductive layers and four second vias. Four resistive elements are formed between two of the four second vias and two of the four second conductive layers. Another two of the four second conductive layers are electrically connected between the two first vias and another two of the four second vias. Two of the second conductive layers are extended along a first direction. The third layer includes two third conductive layers. The two third conductive layers are extended along a second direction. The first direction is vertical to the second direction. Thus, the disposed density of the three-dimensional resistive random access memory structure of the present disclosure can be increased. |