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專利名稱(中) 三維電阻式記憶體結構
專利名稱(英) THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY STRUCTURE
專利家族 中華民國:I806812
專利權人 國立清華大學 100%
發明人 金雅琴,林崇榮,黃耀弘
技術領域 材料化工,工業工程,電子電機
專利摘要(英)
A three-dimensional resistive random access memory structure is proposed. The three-dimensional resistive random access memory structure includes a base layer, a first layer, a second layer and a third layer. The first layer includes three first conductive layers and two first vias. Two of the three first conductive layers are electrically connected to the two first vias. The second layer includes four second conductive layers and four second vias. Four resistive elements are formed between two of the four second vias and two of the four second conductive layers. Another two of the four second conductive layers are electrically connected between the two first vias and another two of the four second vias. Two of the second conductive layers are extended along a first direction. The third layer includes two third conductive layers. The two third conductive layers are extended along a second direction. The first direction is vertical to the second direction. Thus, the disposed density of the three-dimensional resistive random access memory structure of the present disclosure can be increased.
聯絡資訊
承辦人姓名 李曉琪
承辦人電話 03-5715131 #31061
承辦人Email hsiaochi@mx.nthu.edu.tw
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