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專利授權區

專利授權區
專利名稱(中)	全波段超高演色性有機發光二極體
專利名稱(英)	Full-band and high-CRI organic light-emitting diode
專利家族	中華民國：I501440 美國：8,809,848
專利權人	國立清華大學 100%
發明人	楊富欽,曾俊儒,周卓煇
技術領域	光電光學

專利摘要(中)
The present invention relates to a full-band and high-CRI organic light-emitting diode, comprising: a first conductive layer, at least one first carrier transition layer, a plurality of light-emitting layers, at least one second carrier transition layer, and a second conductive layer. In the present invention, a plurality of dyes are doped in the light-emitting layers, so as to make the light-emitting layers emit a plurality of blackbody radiation complementary lights, wherein the chromaticity coordinates of the blackbody radiation complementary lights surround to a specific area on 1931 CIE (Commission International de’Eclairage) Chromaticity Diagram, moreover, the specific area fully encloses the Planck’s locus on 1931 CIE Chromaticity Diagram, such that the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.

專利摘要(中)

The present invention relates to a full-band and high-CRI organic light-emitting diode, comprising: a first conductive layer, at least one first carrier transition layer, a plurality of light-emitting layers, at least one second carrier transition layer, and a second conductive layer. In the present invention, a plurality of dyes are doped in the light-emitting layers, so as to make the light-emitting layers emit a plurality of blackbody radiation complementary lights, wherein the chromaticity coordinates of the blackbody radiation complementary lights surround to a specific area on 1931 CIE (Commission International de’Eclairage) Chromaticity Diagram, moreover, the specific area fully encloses the Planck’s locus on 1931 CIE Chromaticity Diagram, such that the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw