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專利授權區
專利名稱(中)	V-VI族半導體之奈米片狀陣列結構之製備方法
專利名稱(英)	METHOD FOR PREPARING NANO-SHEET ARRAY STRUCTURE OF GROUP V-VI SEMICONDUCTOR
專利家族	美國：9,023,663
專利權人	國立清華大學 100.00%
發明人	蔡鴻偉,詹宗晟,闕郁倫
技術領域	材料化工

專利摘要(中)
The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.

專利摘要(中)

The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw