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專利授權區


專利授權區
專利名稱(英) BUILT-IN SELF-REPAIR METHOD FOR NAND FLASH MEMORY AND SYSTEM THEREOF
專利家族 中華民國:I336890
美國:7,859,900
專利權人 國立清華大學 100%
發明人 蕭裕穎,吳誠文
技術領域 電子電機
專利摘要(中)
A built-in self-test system applied to NAND flash memory comprises a built-in self-test circuit, a built-in redundancy-analysis circuit, a content addressable memory, a spare memory, a page-mode processor and an address generator. The built-in self-test circuit is configured to test for defective data in a NAND flash memory. The built-in redundancy-analysis circuit is connected to the built-in self-test circuit. The content addressable memory is connected to the built-in redundancy-analysis circuit for storing the address of the defective data. The spare memory is electrically connected to the content addressable memory. The page-mode processor is configured to generate a page address signal and a compensation signal according to an address signal of the NAND flash memory. The address generator is configured to generate a current address signal according to the page address signal and compensation signal to the content addressable memory.
聯絡資訊
承辦人姓名 李曉琪
承辦人電話 03-5715131 #31061
承辦人Email hsiaochi@mx.nthu.edu.tw
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