A semiconductor structure comprises a substrate, an epitaxial layer, an active area and a termination. The substrate has a first conducting type of semiconductor material. The epitaxial layer disposed on the substrate has a first conducting type of semiconductor material. The active area is a working area of the semiconductor structure. The termination protects the active area. The termination has a junction termination extension (JTE) having a second conducting type of semiconductor material. The counter-doped area is disposed in the JTE area and has the first conducting type of semiconductor material. A dose of the first conducting type of semiconductor material in the counter-doped area increases along one direction. |