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專利授權區
專利名稱(英) THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY STRUCTURE
專利家族 中華民國:I819475
美國:2023-0240083(公開號)
專利權人 國立清華大學 100%
發明人 金雅琴,林崇榮,黃耀弘
技術領域 材料化工,工業工程,電子電機
專利摘要(英)
A three-dimensional resistive random access memory structure includes a base layer, a first layer, a second layer, a third layer and a fourth layer. The first layer includes two first conductive layers and a first via. One of the two first conductive layers is electrically connected between the base layer and the first via. The second layer includes three second conductive layers and two second vias. Two first resistive elements are formed between one of the two second vias and two of the three second conductive layers. The third layer includes three third conductive layers and two third vias. Two second resistive elements are formed between one of the two third vias and two of the three third conductive layers. The fourth layer includes a fourth conductive layer. The fourth conductive layer is electrically connected to the two third vias.
聯絡資訊
承辦人姓名 李曉琪
承辦人電話 03-5715131 #31061
承辦人Email hsiaochi@mx.nthu.edu.tw
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