搜尋專利授權區
關鍵字
選單
專利授權區


專利授權區
專利名稱(中) 微型探測器及缺陷量測方法
專利名稱(英) MICRO DETECTOR AND DEFECT MEASUREMENT METHOD
專利家族 中華民國:I723371
大陸:CN111785650A(公開號)
美國:US-2020-0321255-A1(公開號)
專利權人 國立清華大學 100%
發明人 蔡宜霈,林本堅,金雅琴,林崇榮
技術領域 光電光學,電子電機
專利摘要(中)
本發明係提供一種微型探測器,其包含一基板、一鰭狀結構、一浮動閘極、一感測閘極、一讀取閘極以及一天線層。鰭狀結構位於基板上。浮動閘極位於基板上,浮動閘極與鰭狀結構彼此垂直交叉。感測閘極位於鰭狀結構之一側。讀取閘極形成於鰭狀結構之另一側。天線層連接感測閘極,其位於感測閘極上方。天線層接觸一外部能量源後產生一引致電荷,透過一耦合效應將引致電荷儲存於浮動閘極內。藉此,可透過計算引致電荷推估晶圓製程中之缺陷分布。
專利摘要(英)
A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate and is perpendicularly across the fin structure. The sensing gate is located on one side of the fin structure. The reading gate is located on the other side of the fin structure. The antenna layer is located above the sensing gate and is connected to the sensing gate. An induced charge is generated when the antenna layer is bombarded by an outside energy source. The induced charge is stored in the floating gate through a coupling effect. A defect distribution during a wafer manufacturing process can be estimated by calculating the induced charge.
聯絡資訊
承辦人姓名 李佳玲
我有興趣 BACK