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專利授權區

專利授權區
專利名稱(中)	III族-氮化物發光二極體與其形成方法
專利名稱(英)	METHOD OF PRODUCING III-NITRIDE LIGHT-EMITTING DIODE
專利家族	美國：8,669,128
專利權人	國立清華大學 100.00%
發明人	林弘偉,呂宥蓉,果尚志
技術領域	光電光學

專利摘要(中)
This invention relates to structures and fabricating methods of light-emitting diodes capable of emitting white or a color within full-visible-spectrum with better efficiency and flexibility. An embodiment provides a light-emitting diode array consisted of one or more light-emitting diodes on a substrate. Each light-emitting diode comprises a first doped nanorod, an active light-emitting region consisted of one or more nanodisks on the first doped nanorod, and a second doped nanorod on the active light-emitting region. Another embodiment provides a fabricating method of the light-emitting diode array.

專利摘要(中)

This invention relates to structures and fabricating methods of light-emitting diodes capable of emitting white or a color within full-visible-spectrum with better efficiency and flexibility. An embodiment provides a light-emitting diode array consisted of one or more light-emitting diodes on a substrate. Each light-emitting diode comprises a first doped nanorod, an active light-emitting region consisted of one or more nanodisks on the first doped nanorod, and a second doped nanorod on the active light-emitting region. Another embodiment provides a fabricating method of the light-emitting diode array.

聯絡資訊
承辦人姓名	李馥如