專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

搜尋專利授權區

關鍵字

» 新增關鍵字

選單

專利授權區

專利授權區
專利名稱(英)	ELECTRODE STRUCTURE AND QUANTUM DOT ELECTROLUMINESCENT DEVICE
專利家族	中華民國：I803322 美國：US-2023-0380201-A1(公開號)
專利權人	國立清華大學 100.00%
發明人	陳學仕,楊璇
技術領域	光電光學

專利摘要(英)
An electrode structure is disclosed. The electrode structure consists of a seed layer, an electrode layer formed on the seed layer and a cover layer formed on the electrode layer. This electrode structure is for application in the manufacture of a quantum dots electroluminescent device, so as to act as an anode electrode or a cathode electrode of the QD electroluminescent device. Experimental data have revealed that, there is no transmittance imbalance occurring in the QD electroluminescent device using the particularly-designed electrode structure. Moreover, the QD electroluminescent device has enhanced in the brightness, total current efficiency and EQE thereof.

專利摘要(英)

An electrode structure is disclosed. The electrode structure consists of a seed layer, an electrode layer formed on the seed layer and a cover layer formed on the electrode layer. This electrode structure is for application in the manufacture of a quantum dots electroluminescent device, so as to act as an anode electrode or a cathode electrode of the QD electroluminescent device. Experimental data have revealed that, there is no transmittance imbalance occurring in the QD electroluminescent device using the particularly-designed electrode structure. Moreover, the QD electroluminescent device has enhanced in the brightness, total current efficiency and EQE thereof.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw