專利授權區國立清華大學國際產學營運總中心 Operations Center for Industry Collaboration

搜尋專利授權區

關鍵字

» 新增關鍵字

選單

專利授權區

專利授權區
專利名稱(英)	SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF, AND HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
專利家族	中華民國：I912936 美國：2026-0090000(公開號)
專利權人	國立清華大學 100.00%
發明人	黃敬源,賴俊豪
技術領域	材料化工,能源科技,資訊工程,電子電機,工業工程

專利摘要(英)
A semiconductor structure includes a substrate, a channel layer, a barrier layer, a gate structure, a first passivation layer and a second passivation layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate structure and the first passivation layer are disposed on the barrier layer. The second passivation layer is disposed on the first passivation layer, and a material composition of the second passivation layer is different from a material composition of the first passivation layer. The channel layer has two first two-dimensional electron gas regions near the barrier layer, and the first two-dimensional electron gas regions are located on two sides of the gate structure. The barrier layer has two second two-dimensional electron gas regions near the first passivation layer, and the second two-dimensional electron gas regions are located on two sides of the gate structure.

專利摘要(英)

A semiconductor structure includes a substrate, a channel layer, a barrier layer, a gate structure, a first passivation layer and a second passivation layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The gate structure and the first passivation layer are disposed on the barrier layer. The second passivation layer is disposed on the first passivation layer, and a material composition of the second passivation layer is different from a material composition of the first passivation layer. The channel layer has two first two-dimensional electron gas regions near the barrier layer, and the first two-dimensional electron gas regions are located on two sides of the gate structure. The barrier layer has two second two-dimensional electron gas regions near the first passivation layer, and the second two-dimensional electron gas regions are located on two sides of the gate structure.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw