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專利授權區
專利名稱(中)	電阻式記憶體
專利名稱(英)	MULTILAYER-STACKED RESISTIVE RANDOM ACCESS MEMORY DEVICE
專利家族	中華民國：I559519 美國：9,450,184
專利權人	國立清華大學 100%
發明人	張平,洪英展,王粲琁,游萃蓉
技術領域	材料化工,電子電機

專利摘要(中)
A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Cu, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal.

專利摘要(中)

A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Cu, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal.

聯絡資訊
承辦人姓名	楊美茹
承辦人電話	03-5715131 #62305
承辦人Email	mjyang2@mx.nthu.edu.tw