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專利授權區

專利授權區
專利名稱(中)	具單向導通特性的可變電阻式記憶單元及其製造方法
專利名稱(英)	RESISTIVE RANDOM ACCESS MEMORY UNIT WITH ONE-WAY CONDUCTION CHARACTERISTIC AND FABRICATING METHOD THEREOF
專利家族	中華民國：I851350 美國：2025-0029655(公開號)
專利權人	國立清華大學 100.00%
發明人	金雅琴,林崇榮,林昱丞,黃耀弘
技術領域	電子電機

專利摘要(中)
本發明提供一種具單向導通特性的可變電阻式記憶單元的製造方法，包含初始步驟、形成步驟及反向重置步驟。初始步驟係提供可變電阻式記憶單元。可變電阻式記憶單元包含上層金屬層、通孔及下層金屬層，上層金屬層連接通孔，且下層金屬層與通孔之間具有間隙。形成步驟係對下層金屬層施加設定電壓，並將上層金屬層耦接接地電位，使可變電阻式記憶單元由高電阻狀態轉換為低電阻狀態。反向重置步驟係將下層金屬層耦接接地電位，並對上層金屬層施加重置電壓，使可變電阻式記憶單元變為單向導通狀態。藉此，透過單一方向進行讀取及寫入操作。

專利摘要(中)

本發明提供一種具單向導通特性的可變電阻式記憶單元的製造方法，包含初始步驟、形成步驟及反向重置步驟。初始步驟係提供可變電阻式記憶單元。可變電阻式記憶單元包含上層金屬層、通孔及下層金屬層，上層金屬層連接通孔，且下層金屬層與通孔之間具有間隙。形成步驟係對下層金屬層施加設定電壓，並將上層金屬層耦接接地電位，使可變電阻式記憶單元由高電阻狀態轉換為低電阻狀態。反向重置步驟係將下層金屬層耦接接地電位，並對上層金屬層施加重置電壓，使可變電阻式記憶單元變為單向導通狀態。藉此，透過單一方向進行讀取及寫入操作。

專利摘要(英)
A fabricating method of a resistive random access memory unit with one-way conduction characteristic is proposed. The fabricating method of the resistive random access memory unit with one-way conduction characteristic includes performing an initializing step, a forming step and a reverse resetting step. The initializing step is performed to provide the resistive random access memory unit. The resistive random access memory unit includes an upper metal layer, a via and a lower metal layer. The upper metal layer is connected to the via, and a gap is between the lower metal layer and the via. The forming step is performed to apply a setting voltage on the lower metal layer, and the upper metal layer is coupled to a ground voltage. The resistive random access memory unit transforms to a low resistive state from a high resistive state. The reverse resetting step is performed to couple the lower metal layer to the ground voltage, and apply a resetting voltage to the upper metal layer. The resistive random access memory unit transforms to a one-way conduction state from the low resistive state. Thus, the fabricating method of the resistive random access memory unit with one-way conduction characteristic of the present disclosure can read and write in one direction.

專利摘要(英)

A fabricating method of a resistive random access memory unit with one-way conduction characteristic is proposed. The fabricating method of the resistive random access memory unit with one-way conduction characteristic includes performing an initializing step, a forming step and a reverse resetting step. The initializing step is performed to provide the resistive random access memory unit. The resistive random access memory unit includes an upper metal layer, a via and a lower metal layer. The upper metal layer is connected to the via, and a gap is between the lower metal layer and the via. The forming step is performed to apply a setting voltage on the lower metal layer, and the upper metal layer is coupled to a ground voltage. The resistive random access memory unit transforms to a low resistive state from a high resistive state. The reverse resetting step is performed to couple the lower metal layer to the ground voltage, and apply a resetting voltage to the upper metal layer. The resistive random access memory unit transforms to a one-way conduction state from the low resistive state. Thus, the fabricating method of the resistive random access memory unit with one-way conduction characteristic of the present disclosure can read and write in one direction.

聯絡資訊
承辦人姓名	李曉琪
承辦人電話	03-5715131 #31061
承辦人Email	hsiaochi@mx.nthu.edu.tw