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專利授權區

專利授權區
專利名稱(中)	光阻劑、半導體裝置之製造方法及極紫外線微影術方法
專利名稱(英)	PHOTORESIST, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND METHOD OF EXTREME ULTRAVIOLET LITHOGRAPHY
專利家族	中華民國：I843085 大陸：CN 116224715 A(公開號) 美國：US20230259024A1(公開號)
專利權人	國立清華大學 63.64% ,台灣積體電路製造股份有限公司 36.36%
發明人	劉瑞雄,李柏璇,呂安云,陳冠廷,陳柏熊,林本堅
技術領域	光電光學,電子電機

專利摘要(中)
一種製造半導體裝置的方法，包括以下步驟：在基板上形成光阻劑層，將光阻劑層選擇性地曝露於EUV輻射，及顯影選擇性地曝光的光阻劑層。光阻劑層的組成物包括溶劑及光敏化合物，該光敏化合物溶解於溶劑且由結合六聚體錫及兩個氯配體的分子簇化合物組成。

專利摘要(英)
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, selectively exposing the photoresist layer to an EUV radiation, and developing the selectively exposed photoresist layer. The photoresist layer has a composition including a solvent and a photo-active compound dissolved in the solvent and composed of a molecular cluster compound incorporating hexameric tin and two chloro ligands.

專利摘要(英)

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, selectively exposing the photoresist layer to an EUV radiation, and developing the selectively exposed photoresist layer. The photoresist layer has a composition including a solvent and a photo-active compound dissolved in the solvent and composed of a molecular cluster compound incorporating hexameric tin and two chloro ligands.

聯絡資訊
承辦人姓名	黃允恬
承辦人電話	(03)571-5131#62305
承辦人Email	yuntian@mx.nthu.edu.tw